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| APTDF30H601G Fast Diode Full Bridge Power Module 3 CR1 5 6 CR2 CR4 4 CR3 1 2 VRRM = 600V IC = 30A @ Tc = 90C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits * * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration 7 8 9 10 All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Absolute maximum ratings APTDF30H601G - Rev 1 September, 2008 Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25C TC = 90C TJ = 45C Max ratings 600 42 30 250 Unit V A Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF30H601G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 30A IF = 60A Tj = 125C IF = 30A Tj = 25C VR = 600V Tj = 125C VR = 200V Min Typ 1.8 2.2 1.5 Max 2.2 Unit V 250 500 36 A pF Dynamic Characteristics Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 30A VR = 400V di/dt=1000A/s IF = 30A VR = 400V di/dt = 200A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Min Typ 25 160 35 480 3 6 85 920 20 ns nC A Max Unit ns nC A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 1.2 175 125 100 4.7 80 Unit C/W V C N.m g APTDF30H601G - Rev 1 September, 2008 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 www.microsemi.com 2-4 APTDF30H601G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 120 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125C VR=400V TJ=25C TJ=125C Trr vs. Current Rate of Charge 175 150 125 60 A TJ=125C VR=400V 100 30 A 75 15 A 50 0 200 400 600 800 1000 1200 -diF/dt (A/s) IRRM vs. Current Rate of Charge QRR, Reverse Recovery Charge (C) IRRM, Reverse Recovery Current (A) 1.5 60 A 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) TJ=125C VR=400V 60 A 30 A 15 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 200 175 C, Capacitance (pF) 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V) Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (C) Duty Cycle = 0.5 TJ=175C www.microsemi.com 3-4 APTDF30H601G - Rev 1 September, 2008 APTDF30H601G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF30H601G - Rev 1 September, 2008 |
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